// Oscillator Specifications
MHz
dB
dBm
kHz
// LC Tank Circuit Design
nH
pF
× (Cmax/Cmin)
V
Resonance: f0 = 1/(2π√LC)
Colpitts: C1∥C2 in shunt, L in series. Feedback ratio n = C1/(C1+C2)
Start-up condition: gm ≥ (C1+C2)² / (C1·C2·Rp)
where Rp = Qu·ω0·L (parallel tank resistance)
// Leeson Phase Noise Results
Leeson Equation
Phase noise L(f) at 100 kHz offset
Phase noise L(f) at 1 MHz offset
Phase noise L(f) at 10 MHz offset
Noise floor (far from carrier)
1/f³ corner (flicker region)
Tank Circuit
Required capacitance C
Tank parallel resistance Rp
Coupling capacitor Ccoup
Oscillation start-up gm,min
VCO Performance
Tuning sensitivity KV
Tuning range Δf
VCO figure of merit (FOM)
Pushing figure (est.)
Pulling figure (est.)
// Phase Noise vs Offset Frequency
Leeson model — 1/f³ region (flicker), 1/f² region (thermal), noise floor
// Typical Phase Noise Reference
Oscillator TypeQL@ 100 kHz@ 1 MHzApplication
LC VCO (CMOS)10–30−90 dBc/Hz−115 dBc/HzPLL reference
LC VCO (bipolar)20–50−110 dBc/Hz−130 dBc/HzMobile PA LO
Dielectric resonator1000–10000−130 dBc/Hz−155 dBc/HzBase station LO
Crystal oscillator50k–500k−150 dBc/Hz−170 dBc/HzReference, TCXO
SAW oscillator5000–20000−120 dBc/Hz−145 dBc/HzNarrowband TX
Leeson equation:
L(f) = 10·log[F·kT/(2Ps) × (1+(f0/2QLf)²) × (1+fc/f)]
F = amplifier noise factor (linear)  ·  k = 1.38×10⁻²³
Ps = signal power at resonator  ·  fc = 1/f corner frequency